Structure and fabrication of electron-emitting device having lad

Details Structure and fabrication of electron-emitting device having lad Structure and fabrication of electron-emitting device having lad

1997-05-30

1999-12-14

Day, Michael

Electric lamp and discharge devices

Discharge devices having a multipointed or serrated edge...

313336, 313306, H01J 130, H01J 1924

Patent

active

060021993

ABSTRACT:
An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.

REFERENCES:
patent: 4178531 (1979-12-01), Alig
patent: 4874981 (1989-10-01), Spindt
patent: 4940916 (1990-07-01), Borel et al.
patent: 5070282 (1991-12-01), Epsztein
patent: 5191217 (1993-03-01), Kane et al.
patent: 5235244 (1993-08-01), Spindt
patent: 5315207 (1994-05-01), Hoeberechts et al.
patent: 5374868 (1994-12-01), Tjaden et al.
patent: 5528103 (1996-06-01), Spindt et al.
patent: 5543683 (1996-08-01), Haven et al.
patent: 5559389 (1996-09-01), Spindt et al.
patent: 5564959 (1996-10-01), Spindt et al.
patent: 5649847 (1997-07-01), Haven
patent: 5650690 (1997-07-01), Haven
patent: 5818403 (1998-10-01), Nakamura et al.
patent: 5828163 (1998-10-01), Jones et al.
Kim et al, "High-Aperture and Fault-Tolerant Pixel Structure for TFT-LCDs", SID 95 Digest, 1995, pp. 15-18, (No month).
Thompson et al, An Introduction to Microlithography (2nd ed.), 1994, pp. 162-169, (No month).

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