Structure and fabrication method for stackable, air-gap-containi

Details Structure and fabrication method for stackable, air-gap-containi Structure and fabrication method for stackable, air-gap-containi

1998-11-13

2000-01-25

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, H01L 2144

Patent

active

060178140

ABSTRACT:
A structured dielectric layer and fabrication process for separating wiring levels and wires within a level on a semiconductor chip is described incorporating a lower dielectric layer having narrow air gaps to form dielectric pillars or lines and an upper dielectric layer formed over the pillars or fine lines wherein the air gaps function to substantially reduce the effective dielectric constant of the structured layer. The invention overcomes the problem of solid dielectric layers which would have the higher dielectric constant of the solid material used.

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J. E. Cronin et al., IBM TDB 32/8A, 88 (Jan. 1990).
K. Daetwyler et al., IBM TDB 31/4, 266 (Sep. 1988).

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