Structural element and process for its production including...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S761000, C438S765000, C438S771000

Reexamination Certificate

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06916739

ABSTRACT:
A method for manufacturing structural elements provides a first part with a surface that is substantially copper and a second part with a surface of a metal. The surface of the first part is coated with a hard layer which is stable at a temperature of at least 80° C. and which, at this temperature, forms an oxygen diffusion barrier when exposed to ambient. The layer has a barrier effect similar to that of an aluminum oxide layer formed in a standard environment on aluminum. The surfaces are connected to each other by bonding with heating to at least 80° C.

REFERENCES:
patent: 3615942 (1971-10-01), Blumenfeld et al.
patent: 5486277 (1996-01-01), Barbee et al.
patent: 5820980 (1998-10-01), Asakawa et al.
patent: 6033482 (2000-03-01), Parkhe
patent: 6335569 (2002-01-01), Joshi
patent: 2002/0009621 (2002-01-01), Finely et al.
patent: 2002/0127845 (2002-09-01), Farrar

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