Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-12
2005-07-12
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S761000, C438S765000, C438S771000
Reexamination Certificate
active
06916739
ABSTRACT:
A method for manufacturing structural elements provides a first part with a surface that is substantially copper and a second part with a surface of a metal. The surface of the first part is coated with a hard layer which is stable at a temperature of at least 80° C. and which, at this temperature, forms an oxygen diffusion barrier when exposed to ambient. The layer has a barrier effect similar to that of an aluminum oxide layer formed in a standard environment on aluminum. The surfaces are connected to each other by bonding with heating to at least 80° C.
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Brewster William M.
Coleman W. David
Notaro $ Michalos PC
Unaxis Balzers AG
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