Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000, C257S383000, C257S384000, C257S751000
Reexamination Certificate
active
07968952
ABSTRACT:
A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
REFERENCES:
patent: 6087706 (2000-07-01), Dawson et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6790773 (2004-09-01), Drewery et al.
patent: 6881667 (2005-04-01), Sandhu et al.
patent: 7183207 (2007-02-01), Kang et al.
patent: 7410875 (2008-08-01), Ting et al.
patent: 7649232 (2010-01-01), Tamura et al.
patent: 7719062 (2010-05-01), Fischer et al.
patent: 2003/0075752 (2003-04-01), Motoyama
patent: 2005/0194637 (2005-09-01), Tamaru
patent: 2006/0131662 (2006-06-01), Yamada et al.
patent: 2007/0026712 (2007-02-01), Yoon et al.
patent: 2007/0228482 (2007-10-01), Wei et al.
patent: 2008/0023772 (2008-01-01), Kawakita
patent: 2008/0083955 (2008-04-01), Kanarsky et al.
patent: 2008/0296691 (2008-12-01), Chuang et al.
Intel Corporation Office Action for U.S. Appl. No. 11/647,977 mailed Jun. 22, 2009.
Intel Corporation Notice of Allowance for U.S. Appl. No. 11/647,977 mailed Jan. 6, 2010.
Chikarmane Vinay B.
Fischer Kevin J.
Peterson Brennan L.
Blakely , Sokoloff, Taylor & Zafman LLP
Bryant Kiesha R
Intel Corporation
Ward Eric
LandOfFree
Stressed barrier plug slot contact structure for transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stressed barrier plug slot contact structure for transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stressed barrier plug slot contact structure for transistor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2637225