Stress transfer by sequentially providing a highly stressed...

Details Stress transfer by sequentially providing a highly stressed... Stress transfer by sequentially providing a highly stressed...

2011-08-09

2011-08-09

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S369000

Reexamination Certificate

active

07994072

ABSTRACT:
By forming two or more individual dielectric layers of high intrinsic stress levels with intermediate interlayer dielectric material, the limitations of respective deposition techniques, such as plasma enhanced chemical vapor deposition, may be respected while nevertheless providing an increased amount of stressed material above a transistor element, even for highly scaled semiconductor devices.

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