Static information storage and retrieval – Read/write circuit – Testing
Patent
1995-06-02
1997-07-01
Zarabian, A.
Static information storage and retrieval
Read/write circuit
Testing
36518909, G11C 700
Patent
active
056445423
ABSTRACT:
A method for stress testing a memory array in an integrated circuit. Control circuitry selects a plurality of row lines at one time. An overvoltage suitable for stressing the cells of the array is placed on the bit lines. Because a block of cells has been selected, the overvoltage is applied to all cells of the block. The block of cells selected may be either the entire memory array or a portion of the memory array. The selected rows remain selected for the duration of the stress test. Because the overvoltage is applied directly to selected cells, the full overvoltage will be used to stress the transistor gates for the entire test period. In this manner, latent defects within the memory array can be detected.
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Brady James
McClure David Charles
Galanthay Theodore E.
Jorgenson Lisa K.
Larson Renee M.
SGS-Thomson Microelectronics Inc.
Zarabian A.
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