Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-11-01
2005-11-01
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S635000, C438S622000
Reexamination Certificate
active
06960835
ABSTRACT:
In a semiconductor integrated circuit device, thermo-mechanical stresses on the vias can be reduced by introducing a stress relief layer between the vias and a hard dielectric layer that overlies the vias.
REFERENCES:
patent: 2004/0227214 (2004-11-01), Hoinkis et al.
Barth Hans-Joachim
Friese Gerald R.
Hoinkis Mark D.
Kaltalioglu Erdem
Leung Pak
Brinks Hofer Gilson & Lione
Prenty Mark V.
United Microelectronics Co.
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