Stress measurement and stress balance in films

Details Stress measurement and stress balance in films Stress measurement and stress balance in films

2008-05-20

2008-05-20

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000, C438S077000, C438S082000, C438S099000, C257SE21108, C257SE21126

Reexamination Certificate

active

07374960

ABSTRACT:
Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.

REFERENCES:
patent: 2007/0240631 (2007-10-01), Nijhawan et al.

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