Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2007-04-10
2007-04-10
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S347000, C257SE29193, C438S149000, C438S479000, C438S517000
Reexamination Certificate
active
11162953
ABSTRACT:
A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.
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Chidambarrao Dureseti
Henson William K.
Rim Kern
Wille William C.
Andujar Leonardo
International Business Machines - Corporation
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Wilson Scott R.
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