Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-09-19
2006-09-19
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S763000, C438S962000
Reexamination Certificate
active
07109121
ABSTRACT:
A method of forming a suspended semiconductor film is provided comprising providing a semiconductor structure including a layer of semiconductor film over a sacrificial layer, the semiconductor film secured to a substrate; depositing a film of material over the semiconductor film that has a tensile or compressive strain with respect to the semiconductor film patterning the deposited film to leave opposed segments spaced from each other by a central portion of the semiconductor film; patterning the semiconductor film and removing the sacrificial layer beneath the semiconductor film to leave a semiconductor film section anchored to the substrate at at least two anchor positions, with the film segments remaining on the semiconductor film adjacent to the anchor positions and spaced from each other by the central position of the suspended semiconductor film such that the film segments apply a tensile or compressive stress to the suspended semiconductor film.
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Lagally Max G.
Lal Amit
Lee Chung Hoon
Rugheimer Paul Powell
Barnes Seth
Foley & Lardner LLP
Smith Zandra V.
Wisconsin Alumni Research Foundation
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