Strapping word lines of NAND memory devices

Details Strapping word lines of NAND memory devices Strapping word lines of NAND memory devices

2007-03-20

2007-03-20

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257SE29129, C257SE29300

Reexamination Certificate

active

10909716

ABSTRACT:
Apparatus and methods are provided. Conductive straps are connected to a subset of word lines of a memory device. Alternatively, first conductive straps are respectively connected only to first portions of first word lines of a memory device, and second conductive straps are respectively connected only to second portions of second word lines of the memory device, where each first word line is adjacent at least one second word line. One or more contacts can be used to connect a conductive strap to its respective word line.

REFERENCES:
patent: 5717645 (1998-02-01), Kengeri
patent: 5933387 (1999-08-01), Worley
patent: 6240046 (2001-05-01), Proebsting
patent: 6760267 (2004-07-01), Chevallier
patent: 2005/0202622 (2005-09-01), Violette et al.

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