Stram with self-reference read scheme

Details Stram with self-reference read scheme Stram with self-reference read scheme

2011-01-25

2011-01-25

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189150, C365S209000

Reexamination Certificate

active

07876604

ABSTRACT:
Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

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