STRAM with electronically reflective insulative spacer

Details STRAM with electronically reflective insulative spacer STRAM with electronically reflective insulative spacer

2011-05-10

2011-05-10

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

Reexamination Certificate

active

07940551

ABSTRACT:
Spin-transfer torque memory having a specular insulative spacer is disclosed. The spin-transfer torque memory unit includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, an electrode layer, and an electrically insulating and electronically reflective layer separating the electrode layer and the free magnetic layer.

REFERENCES:
patent: 6700753 (2004-03-01), Singleton
patent: 6714444 (2004-03-01), Huai
patent: 6829161 (2004-12-01), Huai
patent: 6838740 (2005-01-01), Huai
patent: 6847547 (2005-01-01), Albert
patent: 6888742 (2005-05-01), Nguyen
patent: 6933155 (2005-08-01), Albert
patent: 6958927 (2005-10-01), Nguyen
patent: 6967863 (2005-11-01), Huai
patent: 6985385 (2006-01-01), Nguyen
patent: 6992359 (2006-01-01), Nguyen
patent: 7057921 (2006-06-01), Valet
patent: 7088609 (2006-08-01), Valet
patent: 7110287 (2006-09-01), Huai
patent: 7126202 (2006-10-01), Huai
patent: 7139188 (2006-11-01), Moore
patent: 7154769 (2006-12-01), Krieger
patent: 7161829 (2007-01-01), Huai
patent: 7190611 (2007-03-01), Nguyen
patent: 7224598 (2007-05-01), Perner
patent: 7230845 (2007-06-01), Wang
patent: 7233039 (2007-06-01), Huai
patent: 7241631 (2007-07-01), Huai
patent: 7242045 (2007-07-01), Nguyen
patent: 7242048 (2007-07-01), Huai
patent: 7245462 (2007-07-01), Huai
patent: 7369427 (2008-05-01), Diao
patent: 7430135 (2008-09-01), Hua
patent: 7486551 (2009-02-01), Li
patent: 7486552 (2009-02-01), Apalkov
patent: 7489541 (2009-02-01), Pakala
patent: 7518835 (2009-04-01), Huai
patent: 7576956 (2009-08-01), Huai
patent: 2006/0018057 (2006-01-01), Huai
patent: 2006/0049472 (2006-03-01), Diao
patent: 2006/0060901 (2006-03-01), Nakamura
patent: 2007/0177421 (2007-08-01), Sugiyama
patent: 2009/0050991 (2009-02-01), Nagai
patent: 2009/0302403 (2009-12-01), Nguyen
patent: 610 391 (2005-12-01), None
patent: 1903624 (2008-03-01), None
patent: 1918937 (2008-05-01), None
patent: 1970911 (2008-09-01), None
PCT Search Report and Written Opinion dated Feb. 4, 2010.
Zheng et al., Low Switching Current Flux-Closed Magnetoresistive Random Access Memory, Journal of Applied Physics, May 15, 2003.
Egelhoff et al., Oxygen as a Surfactant in the Growth of Giant Magnetoresistance Spin Valves, Journal of Applied Physics 82 (12), Dec. 15, 1997.
Slonczewski, Current-Driven Excitation of Magnetic Multilayers, Journal of Magnetism and Magnetic Materials 159 (1996) L1-L7.
Sun, Current-Driven Magnetic Switching in Manganite Trilayer Junctions, Journal of Magnetism and Magnetic Materials 202 (1999) 157-162.
Li et al., Role of Oxygen Exposure in Different Positions in the Synthetic Spin Valves, Journal of Applied Physics, vol. 93, No. 10, May 15, 2003.
U.S. Appl. No. 12/239,884, filed Sep. 29, 2008, Inventor: Zheng.
U.S. Appl. No. 12/239,882, filed Sep. 29, 2008, Inventor: Zheng.
PCT Search Report and Written Opinion dated May 3, 2010.

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