Strained silicon semiconductor on insulator MOSFET

Details Strained silicon semiconductor on insulator MOSFET Strained silicon semiconductor on insulator MOSFET

2006-04-25

2006-04-25

Eckert, George (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S347000

Reexamination Certificate

active

07033869

ABSTRACT:
An SOI substrate comprises a layer of strained silicon sandwiched between a dielectric layer and a layer of strained silicon. The substrate may be used to form a strained silicon SOI MOSFET having a gate electrode that extends through the silicon germanium layer to a channel region formed in the strained silicon layer. The MOSFET may be formed in a fully depleted state by using a strained silicon layer of appropriate thickness.

REFERENCES:
patent: 6310367 (2001-10-01), Yagishita et al.
patent: 6509234 (2003-01-01), Krivokapic
patent: 2002/0053711 (2002-05-01), Chau et al.

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