Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-03-29
2005-03-29
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
Reexamination Certificate
active
06872641
ABSTRACT:
A method for forming a semiconductor substrate structure is provided. A compressively strained SiGe layer is formed on a silicon substrate. Atoms are ion-implanted onto the SiGe layer to cause end-of-range damage. Annealing is performed to relax the strained layer. During the annealing, interstitial dislocation loops are formed as uniformly tributed in the SiGe layer. The interstitial dislocation loops provide a basis for nucleation of misfit dislocations between the SiGe layer and the silicon substrate. Since the interstitial dislocation loops are distributed uniformly, the misfit locations are also distributed uniformly, thereby relaxing the SiGe layer. A tensilely strained silicon layer is formed on the relaxed SiGe layer.
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Chidambarrao Dureseti
Dokumaci Omer H.
Abate Joseph P.
Geyer Scott B.
International Business Machines - Corporation
McGuireWoods LLP
Pert Evan
LandOfFree
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