Strained silicon MOSFET having improved carrier mobility,...

Details Strained silicon MOSFET having improved carrier mobility,... Strained silicon MOSFET having improved carrier mobility,...

2005-02-01

2005-02-01

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S520000, C438S518000, C438S303000, C438S285000, C438S199000, C438S197000

Reexamination Certificate

active

06849527

ABSTRACT:
The mobility enhancement of a strained silicon layer is augmented through incorporation of carbon into a strained silicon lattice to which strain is also imparted by an underlying silicon germanium layer. The presence of the relatively small carbon atoms effectively increases the spacing within the strained silicon lattice and thus imparts additional strain. This enhancement may be implemented for any MOSFET device including silicon on insulator MOSFETs, and is preferably selectively implemented for the PMOS components of CMOS devices to achieve approximately equal carrier mobility for the PMOS and NMOS devices.

REFERENCES:
patent: 6303450 (2001-10-01), Park et al.
patent: 6358806 (2002-03-01), Puchner
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6555839 (2003-04-01), Fitzgerald
patent: 6689671 (2004-02-01), Yu et al.

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