Strained silicon-channel MOSFET using a damascene gate process

Details Strained silicon-channel MOSFET using a damascene gate process Strained silicon-channel MOSFET using a damascene gate process

2007-05-08

2007-05-08

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S018000, C257S192000, C257S347000

Reexamination Certificate

active

11113858

ABSTRACT:
A metal oxide semiconductor field effect transistor (MOSFET) device is provided that includes a localized strained device channel and adjoining source/drain junctions that are unstrained. The MOSFET device has a very high channel carrier mobility, while maintaining a very low leakage junction.

REFERENCES:
patent: 4514895 (1985-05-01), Nishimura
patent: 6310367 (2001-10-01), Yagishita et al.
patent: 6566734 (2003-05-01), Sugihara et al.
patent: 6593191 (2003-07-01), Fitzgerald
patent: 6707106 (2004-03-01), Wristers et al.
patent: 6900502 (2005-05-01), Ge et al.
patent: 2004/0026765 (2004-02-01), Currie et al.

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