Strained Si/SiGe layers on insulator

Details Strained Si/SiGe layers on insulator Strained Si/SiGe layers on insulator

1997-04-30

1999-05-25

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438752, 438753, H01L 2100

Patent

active

059069511

ABSTRACT:
An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or S.sub.i O.sub.2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface above the strained layers, and removing the first substrate. The invention overcomes the problem of forming strained Si and SiGe layers on insulating substrates.

REFERENCES:
patent: 5395769 (1995-03-01), Arienzo et al.
patent: 5462883 (1995-10-01), Dennard et al.
patent: 5534713 (1996-07-01), Ismail et al.
patent: 5659187 (1997-08-01), Legoues et al.

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