Strained Si formed by anneal

Details Strained Si formed by anneal Strained Si formed by anneal

2007-04-10

2007-04-10

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

C438S799000, C257SE21102

Reexamination Certificate

active

10860165

ABSTRACT:
A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium layer. The silicon-germanium layer may include a thickness of 500 angstroms or less. The method for forming the semiconductor structure includes epitaxially forming the silicon-germanium layer and the single crystal silicon layer. The silicon-germanium layer is stressed upon formation. After the single crystal silicon layer is formed over the silicon-germanium layer, an RTA or laser heat treatment process selectively melts the silicon-germanium layer but not the single crystal silicon layer. The substantially molten silicon-germanium relaxes the compressive stresses in the silicon-germanium layer and yields a relaxed silicon-germanium layer and a strained single crystal silicon layer upon cooling.

REFERENCES:
patent: 5273930 (1993-12-01), Steele et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5891769 (1999-04-01), Liaw et al.
patent: 6313016 (2001-11-01), Kibbel et al.
patent: 6562736 (2003-05-01), Yanagawa et al.
patent: 6878610 (2005-04-01), Lin et al.
patent: 2002/0090772 (2002-07-01), Higashi
patent: 2004/0227158 (2004-11-01), Delhougne et al.
patent: 2004/0245552 (2004-12-01), Shiono et al.

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