Strained semiconductor structures

Details Strained semiconductor structures Strained semiconductor structures

2007-01-02

2007-01-02

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S718000, C438S767000

Reexamination Certificate

active

10669063

ABSTRACT:
A method for in situ formation of low defect, strained silicon and a device formed according to the method are disclosed. In one embodiment, a silicon germanium layer is formed on a substrate, and a portion of the silicon germanium layer is removed to expose a surface that is smoothed with a smoothing agent. A layer of strained silicon is formed on the silicon germanium layer. In various embodiments, the entire method is conducted in a single processing chamber, which is kept under vacuum.

REFERENCES:
patent: 6107653 (2000-08-01), Fitzgerald
patent: 2002/0197803 (2002-12-01), Leitz et al.
patent: 2004/0067644 (2004-04-01), Malik et al.
patent: 1085562 (2001-03-01), None
patent: 1085562 (2001-03-01), None
patent: WO 01/54202 (2001-07-01), None
Notification of transmittal of the international search report and the written opinion of the international search suthority, or the declaration, PCT/US2004/030504, Apr. 1, 2005.

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