Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-01
2011-03-01
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S480000, C257SE21563
Reexamination Certificate
active
07897444
ABSTRACT:
A strained (tensile or compressive) semiconductor-on-insulator material is provided in which a single semiconductor wafer and a separation by ion implantation of oxygen process are used. The separation by ion implantation of oxygen process, which includes oxygen ion implantation and annealing creates, a buried oxide layer within the material that is located beneath the strained semiconductor layer. In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.
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Adam Thomas N.
Bedell Stephen W.
de Souza Joel P.
Fogel Keith E.
Reznicek Alexander
Chaudhari Chandra
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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