Strained semiconductor, devices and systems and methods of...

Details Strained semiconductor, devices and systems and methods of... Strained semiconductor, devices and systems and methods of...

2006-08-02

2009-02-03

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C257SE21545, C257SE21547

Reexamination Certificate

active

07485544

ABSTRACT:
In various method embodiments, a device region is defined in a semiconductor substrate and isolation regions are defined adjacent to the device region. The device region has a channel region, and the isolation regions have volumes. The volumes of the isolation regions are adjusted to provide the channel region with a desired strain. In various embodiments, adjusting the volumes of the isolation regions includes transforming the isolation regions from a crystalline region to an amorphous region to expand the volumes of the isolation regions and provide the channel region with a desired compressive strain. In various embodiments, adjusting the volumes of the isolation regions includes transforming the isolation regions from an amorphous region to a crystalline region to contract the volumes of the isolation regions to provide the channel region with a desired tensile strain. Other aspects and embodiments are provided herein.

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