Strained semiconductor device and method of making same

Details Strained semiconductor device and method of making same Strained semiconductor device and method of making same

2011-05-31

2011-05-31

Geyer, Scott B (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000

Reexamination Certificate

active

07952122

ABSTRACT:
To form a semiconductor device, an electrode layer is formed over a semiconductor body. The electrode layer includes an amorphous portion. A liner, e.g., a stress-inducing liner, is deposited over the electrode layer. The electrode layer is annealed to recrystallize the amorphous portion of the electrode layer. The liner can then be removed and an electronic component (e.g., a transistor) that includes a feature (e.g., a gate) formed from the electrode layer can be formed.

REFERENCES:
patent: 6979627 (2005-12-01), Yeap et al.
patent: 7002209 (2006-02-01), Chen et al.
patent: 7012028 (2006-03-01), Bu et al.
patent: 7256081 (2007-08-01), Yang et al.
patent: 7342284 (2008-03-01), Ting et al.
patent: 7384833 (2008-06-01), Polishchuk et al.
patent: 2002/0045325 (2002-04-01), Kuhn et al.
patent: 2005/0051867 (2005-03-01), Lee et al.
patent: 2005/0136583 (2005-06-01), Chen et al.
patent: 2005/0199958 (2005-09-01), Chen et al.
patent: 2006/0035425 (2006-02-01), Carter et al.
patent: 2006/0040462 (2006-02-01), Wu et al.
patent: 2006/0154459 (2006-07-01), Honma et al.
patent: 2007/0108529 (2007-05-01), Huang et al.
patent: 2007/0120154 (2007-05-01), Zhu et al.
patent: 2007/0138564 (2007-06-01), Lim et al.
patent: 2007/0269970 (2007-11-01), Purtell et al.

Affiliated with

Also associated with

Rating

Strained semiconductor device and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Strained semiconductor device and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained semiconductor device and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2644747