Strained semiconductor device

Details Strained semiconductor device Strained semiconductor device

2009-03-26

2011-10-04

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27062, C257SE21632, C438S199000

Reexamination Certificate

active

08030710

ABSTRACT:
A semiconductor device having: a semiconductor substrate; an isolation trench formed in a surface portion of the semiconductor substrate and defining an NMOSFET active region and a PMOSFET active region; a silicon oxide film burying only a lower portion of the isolation trench and defining a recess above the lower portion; an NMOSFET structure formed in the NMOSFET active region and having an insulated gate electrode structure and n-type source/drain regions; a PMOSFET structure formed in the PMOSFET active region and having an insulated gate electrode structure and p-type source/drain regions; a tensile stress film covering the NMOSFET structure and extending to the recess surrounding the NMOSFET active region and to the recess outside the PMOSFET active region along a gate width direction; and a compressive stress film covering the PMOSFET structure and extending to the recess outside the PMOSFET active region along a channel length direction.

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patent: 2003-086708 (2006-03-01), None
patent: 2008-066484 (2008-03-01), None

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