Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Warping of semiconductor substrate
Reexamination Certificate
2007-05-22
2007-05-22
Andujar, Leonardo (Department: 2826)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Warping of semiconductor substrate
C455S455000, C455S456500, C455S166200, C455S166200
Reexamination Certificate
active
10425484
ABSTRACT:
One aspect of the present invention relates to a method for forming a strained semiconductor structure. In various embodiments, at least two strong bonding regions are defined for a desired bond between a crystalline semiconductor membrane and a crystalline semiconductor substrate. The two strong bonding regions are separated by a weak bonding region. The membrane is bonded to the substrate at a predetermined misorientation. The membrane is pinned to the substrate in the strong bonding regions. The predetermined misorientation provides the membrane in the weak bonding region with a desired strain. In various embodiments, the membrane is bonded to the substrate at a predetermined twist angle to biaxially strain the membrane in the weak bonding region. In various embodiments, the membrane is bonded to the substrate at a predetermined tilt angle to uniaxially strain the membrane in the weak bonding region. Other aspects are provided herein.
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Andujar Leonardo
Micro)n Technology, Inc.
Quinto Kevin
Schwegman Lundberg Woessner & Kluth P.A.
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