Strained NMOS transistor featuring deep carbon doped regions...

Details Strained NMOS transistor featuring deep carbon doped regions... Strained NMOS transistor featuring deep carbon doped regions...

2009-01-12

2010-12-28

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material forms active...

C257SE29267

Reexamination Certificate

active

07858981

ABSTRACT:
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.

REFERENCES:
patent: 5756391 (1998-05-01), Tsuchiaki
patent: 5967794 (1999-10-01), Kodama
patent: 6303450 (2001-10-01), Park et al.
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6512252 (2003-01-01), Takagi et al.
patent: 6605498 (2003-08-01), Murthy et al.
patent: 6608354 (2003-08-01), Hokazono et al.
patent: 2001/0025998 (2001-10-01), Tsuchiaki
patent: 2002/0033511 (2002-03-01), Babcock et al.
patent: 2002/0125479 (2002-09-01), Lippert et al.
patent: 2003/0080361 (2003-05-01), Murthy et al.
patent: 2004/0197969 (2004-10-01), Chen et al.
patent: 2004/0262694 (2004-12-01), Chidambaram
patent: 2006/0003561 (2006-01-01), Goktepeli
patent: 2006/0060893 (2006-03-01), Chakravarthi et al.
patent: 10-050989 (1998-02-01), None

Affiliated with

Also associated with

Rating

Strained NMOS transistor featuring deep carbon doped regions... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Strained NMOS transistor featuring deep carbon doped regions..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained NMOS transistor featuring deep carbon doped regions... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4225887