Strained NMOS transistor featuring deep carbon doped regions...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...

Reexamination Certificate

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C257SE29267

Reexamination Certificate

active

07858981

ABSTRACT:
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.

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patent: 2006/0003561 (2006-01-01), Goktepeli
patent: 2006/0060893 (2006-03-01), Chakravarthi et al.
patent: 10-050989 (1998-02-01), None

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