Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2009-01-12
2010-12-28
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257SE29267
Reexamination Certificate
active
07858981
ABSTRACT:
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.
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Hattendorf Michael L.
Hwang Jack
Murthy Anand
Westmeyer Andrew N.
Coleman W. David
Intel Corporation
Nelson Kenneth A.
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