Strained metal silicon nitride films and method of forming

Details Strained metal silicon nitride films and method of forming Strained metal silicon nitride films and method of forming

2007-03-30

2009-02-24

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S785000, C438S758000, C257SE21269, C257SE21274

Reexamination Certificate

active

07494937

ABSTRACT:
A method for forming a strained metal silicon nitride film and a semiconductor device containing the strained metal silicon nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing a substrate to a gas containing a silicon precursor, exposing the substrate to a gas containing a first nitrogen precursor configured to react with the metal precursor or the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas pulse containing a second nitrogen precursor configured to react with the metal precursor or the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the metal silicon nitride film formed on the substrate changes to provide a strained metal silicon nitride film.

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patent: 2006/0216928 (2006-09-01), Chung et al.
patent: 2007/0065578 (2007-03-01), McDougall

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