Strained-channel transistor device

Details Strained-channel transistor device Strained-channel transistor device

2011-07-05

2011-07-05

Brewster, William M (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257SE21208, C257SE29164, C438S003000, C438S050000

Reexamination Certificate

active

07973350

ABSTRACT:
Semiconductor device comprising at least:one substrate,a transistor comprising at least one source region, one drain region, one channel and one gate,a planar layer based on at least one piezoelectric material, resting at least on the gate and capable of inducing at least mechanical strain on the transistor channel, in a direction that is substantially perpendicular to the plane of a face of the piezoelectric layer situated on the gate side,the piezoelectric layer being arranged between two biasing electrodes, one of the two biasing electrodes being formed by a first layer based on at least one electrically conductive material such that the piezoelectric layer is arranged between this first conductive layer and the gate of the transistor.

REFERENCES:
patent: 5883419 (1999-03-01), Lee et al.
patent: 6231779 (2001-05-01), Chiang et al.
patent: 6599781 (2003-07-01), Li
patent: 2003/0015767 (2003-01-01), Emrick et al.
patent: 2003/0092203 (2003-05-01), Murai
patent: 2007/0018328 (2007-01-01), Hierlemann et al.
patent: 2008/0290384 (2008-11-01), Lolivier et al.
patent: 1 024 540 (2000-08-01), None
patent: 2 888 990 (2007-01-01), None
French Preliminary Search Report, FR 0755080, dated Nov. 16, 2007.

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