Strained-channel transistor and methods of manufacture

Details Strained-channel transistor and methods of manufacture Strained-channel transistor and methods of manufacture

2005-04-19

2005-04-19

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S374000, C257S394000, C257S396000, C257S513000, C257S515000

Reexamination Certificate

active

06882025

ABSTRACT:
A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.

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