Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Pham, Thanhha (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257SE29040
Reexamination Certificate
active
07915685
ABSTRACT:
A semiconductor device (and method for making the same) includes a strained-silicon channel formed adjacent a source and a drain, a first gate formed over a first side of the channel, a second gate formed over a second side of the channel, a first gate dielectric formed between the first gate and the strained-silicon channel, and a second gate dielectric formed between the second gate and the strained-silicon channel. The strained-silicon channel is non-planar.
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International Business Machines - Corporation
McGinn Intellectual Property Law Group PLLC
Pham Thanhha
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