Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-04-20
2008-10-28
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29193
Reexamination Certificate
active
07442967
ABSTRACT:
A transistor includes a gate dielectric overlying a channel region. A source region and a drain region are located on opposing sides of the channel region. The channel region is formed from a first semiconductor material and the source and drain regions are formed from a second semiconductor material. A gate electrode overlies the gate dielectric. A pair of spacers is formed on sidewalls of the gate electrode. Each of the spacers includes a void adjacent the channel region. A high-stress film can overlie the gate electrode and spacers.
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Hu Chenming
Ko Chih-Hsin
Lee Wen-Chin
Yeo Yee-Chia
Le Thao P.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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