Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-04-29
2008-04-29
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C257S632000, C257SE21182, C257SE29193
Reexamination Certificate
active
07364989
ABSTRACT:
A method of controlling strain in a single-crystal, epitaxial oxide film, includes preparing a silicon substrate; forming a silicon alloy layer taken from the group of silicon alloy layer consisting of Si1-xGexand Si1-yCyon the silicon substrate; adjusting the lattice constant of the silicon alloy layer by selecting the alloy material content to adjust and to select a type of strain for the silicon alloy layer; depositing a single-crystal, epitaxial oxide film, by atomic layer deposition, taken from the group of oxide films consisting of perovskite manganite materials, single crystal rare-earth oxides and perovskite oxides, not containing manganese; and rare earth binary and ternary oxides, on the silicon alloy layer; and completing a desired device.
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Evans David R.
Hsu Sheng Teng
Ono Yoshi
Tweet Douglas J.
Hoang Quoc
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
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