Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-07-30
2000-02-08
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257627, H01L 2978, H01L 2904
Patent
active
060230827
ABSTRACT:
A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.
REFERENCES:
patent: 5225031 (1993-07-01), McKee et al.
patent: 5323023 (1994-06-01), Fork
patent: 5450812 (1995-09-01), McKee et al.
patent: 5567979 (1996-10-01), Nashimoto
patent: 5650646 (1997-07-01), Summerfelt
McKee Rodney Allen
Walker Frederick Joseph
Craig George L.
Jackson, Jr. Jerome
Lockheed Martin Energy Research Corporation
Marasco Joseph A.
McKee Michael E.
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