Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1980-03-03
1982-03-30
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Semiconductive
365174, 357 23, G11C 1140
Patent
active
043228232
ABSTRACT:
A storage system, such as a read only memory, is provided which includes field effect transistors each having first and second spaced apart diffusion regions of a given conductivity and a gate electrode, with at least one of the two diffusion regions of selected transistors having a third diffusion adjacent to one of the first and second diffusion regions under the gate electrodes to provide a higher voltage threshold for the gate electrode to one diffusion than for the gate electrode to the other of the two diffusions. A voltage is applied to the first diffusion having a polarity and magnitude sufficient to neutralize or eliminate the effects of the higher threshold during a first time period and the current flowing between the first and second diffusions is sensed. During a second period of time the voltage is applied to the second diffusion and the current flow between the first and second diffusions is again sensed. In this manner two cells or bits of information are stored in each transistor, one at the first diffusion and one at the second diffusion. Multilevel storing may also be employed by establishing one of more than two predetermined voltage thresholds at each of the first and second diffusions.
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patent: 3914855 (1974-10-01), Chevey
patent: 4045811 (1977-08-01), Dingwall
patent: 4052229 (1977-10-01), Pashley
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"Double Diffused MOS Transistor Achieves Microwave Gain", T. P. Cauge et al., Electronics, Feb. 15, 1971, pp. 99-104.
"A 100 ns 150 mW 64 K Bit ROM", D. R. WILSON et al., 1978 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, vol. XXI, pp. 152, 153 and 273.
Pricer Wilbur D.
Selleck James E.
Fears Terrell W.
International Business Machines Corp.
Limanek Stephen J.
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