Storage nodes of a semiconductor memory

Details Storage nodes of a semiconductor memory Storage nodes of a semiconductor memory

2007-06-12

2007-06-12

Lee, Calvin (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S704000

Reexamination Certificate

active

11061215

ABSTRACT:
A semiconductor memory device is provided, including a substrate and storage nodes formed on the substrate from a silicon oxide layer, the layer having been substantially removed by wet etching the silicon oxide layer to a predetermined depth of the storage nodes and dry etching the remaining portion of the silicon oxide layer to expose the storage nodes.

REFERENCES:
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5763306 (1998-06-01), Tsai
patent: 6248624 (2001-06-01), Liu

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