Storage node including diffusion barrier layer, phase change...

Details Storage node including diffusion barrier layer, phase change... Storage node including diffusion barrier layer, phase change...

2007-11-21

2010-02-02

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257SE31092, C365S100000, C365S163000, C438S003000, C438S238000

Reexamination Certificate

active

07655940

ABSTRACT:
A phase change memory device and a method of manufacturing the phase change memory device are provided. The phase change memory device may include a switching element and a storage node connected to the switching element, wherein the storage node includes a bottom electrode and a top electrode, a phase change layer interposed between the bottom electrode and the top electrode, and a titanium-tellurium (Ti—Te)-based diffusion barrier layer interposed between the top electrode and the phase change layer. The Ti—Te based diffusion barrier layer may be a TixTe1−xlayer wherein x may be greater than 0 and less than 0.5.

REFERENCES:
patent: 2007/0284622 (2007-12-01), Ryoo et al.

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