Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S325000, C257S411000, C438S216000, C438S261000
Reexamination Certificate
active
07012299
ABSTRACT:
The traditional nitride-only charge storage layer of a SONOS device is replaced by a multifilm charge storage layer comprising more than one dielectric material. Examples of such a multifilm charge storage layer are alternating layers of silicon nitride and silicon dioxide, or alternating layers of silicon nitride and aluminum oxide. The use of more than one material introduces additional barriers to migration of charge carriers within the charge storage layer, and improves both endurance and retention of a SONOS-type memory cell comprising such a charge storage layer.
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Chen En-Hsing
Mahajani Maitreyee
Walker Andrew J.
Flynn Nathan J.
Mandala Jr. Victor A.
Matrix Semiconductor, Inc.
Matrix Semiconductors, Inc.
Squyres Pamela J.
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