Storage element and SRAM cell structures using vertical FETs...

Details Storage element and SRAM cell structures using vertical FETs... Storage element and SRAM cell structures using vertical FETs...

2005-04-26

2005-04-26

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S296000, C257S329000, C257S331000, C257S334000, C257S776000

Reexamination Certificate

active

06885068

ABSTRACT:
A new digital follower device is achieved. The digital follower device comprises an n-channel vertical FET device and a p-channel vertical FET device. Each vertical FET device comprises a bulk region in a semiconductor substrate. The bulk region comprises a first doping type. A STI region is in the bulk region. A drain region is on a first side of the STI region. The drain region overlies the bulk region. The drain region comprises the first doping type. A gate region is on a second side of the STI region. The gate region comprises the first doping type. A voltage on the gate region controls a vertical channel in the bulk region. A buried region is between the gate region and the bulk region. The buried region comprises a second doping type. The n-channel FET device drain and the p-channel FET device drain are connected together. The n-channel FET device gate and the p-channel FET device gate are connected together.

REFERENCES:
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patent: 6117722 (2000-09-01), Wuu et al.
patent: 6137129 (2000-10-01), Bertin et al.
patent: 6297531 (2001-10-01), Armacost et al.
patent: 6313490 (2001-11-01), Noble
patent: 20040070050 (2004-04-01), Chi

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