Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-12-25
2007-12-25
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000
Reexamination Certificate
active
11241315
ABSTRACT:
A memory includes a storage element (10) composed of a storage layer (5) for holding information with the magnetization state of a magnetic material, a magnetization fixed layer (3) provided relative to the storage layer (5) through an intermediate layer (4), the magnetization of the storage layer (5) being changed with application of an electric current to the laminated layer direction to record information on the storage layer (5) and a drive layer (7) provided relative to the storage layer (5) through a nonmagnetic layer (6), the magnetic direction thereof being substantially fixed to the laminated layer direction and an electric current supplying means for applying an electric current to the storage element (10) along the laminated layer direction, wherein contents of information to be recorded are changed during a time period in which an electric current is supplied from the electric current supplying means to the storage element (10).
REFERENCES:
patent: 6714390 (2004-03-01), Terada et al.
patent: 6828785 (2004-12-01), Hosomi et al.
patent: 6979500 (2005-12-01), Hasegawa et al.
patent: 2003-17782 (2003-01-01), None
Nikkei Electronics, Feb. 12, 2001, pp. 164-171.
J.NaHas et al., IEEE/ISSCC 2004 Visulas Supplement, p. 22.
Ho Hoai V.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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