Storage element and memory

Details Storage element and memory Storage element and memory

2008-01-14

2009-12-15

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000, C365S158000, C977S935000, C977S934000

Reexamination Certificate

active

07633796

ABSTRACT:
A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.

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Japanese Office Action issued on Feb. 24, 2009, for corresponding Japanese Patent Application JP 2007-010549.

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