Storage electrode of DRAM cell

Details Storage electrode of DRAM cell Storage electrode of DRAM cell

1995-01-30

1996-10-01

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257308, 257309, 257754, H01L 27108

Patent

active

055613101

ABSTRACT:
A storage electrode of a DRAM cell in a highly-integrated semiconductor device has, in order to secure the surface area thereof greater than that of a conventional tunnel-type storage electrode, an upper plate of storage electrode formed over a lower plate of storage electrode separated therefrom by a predetermined distance, while interposing bars of irregularly shapes formed of a conductive layer to electrically connect the upper and lower plates.

REFERENCES:
patent: 5172201 (1992-12-01), Suizu

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