Storage device with charge trapping structure and methods

Details Storage device with charge trapping structure and methods Storage device with charge trapping structure and methods

2006-01-10

2006-01-10

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S185180, C365S185140, C365S185110, C365S185220, C369S100000, C369S101000

Reexamination Certificate

active

06984862

ABSTRACT:
A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.

REFERENCES:
patent: 5307311 (1994-04-01), Sliwa, Jr.
patent: 5557596 (1996-09-01), Gibson et al.
patent: 5835477 (1998-11-01), Binnig et al.
“Movable Micro-Electromechanical Device”; Walmsley, et al; USPTO Application No. 10/157254; HP Docket No 10012158; Filed May 28, 2002; 36 pages.

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