Storage device having parallel connected memory cells that...

Details Storage device having parallel connected memory cells that... Storage device having parallel connected memory cells that...

2006-04-11

2006-04-11

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07027323

ABSTRACT:
A storage device includes plural groups of memory cells, wherein the memory cells comprise magnetoresistive elements. Each group includes a transistor, and the memory cells of each group include a first set of parallel connected memory cells that are connected to a node of the transistor. The storage device further includes a sensing device to detect a state of a memory cell in a selected one of the groups.

REFERENCES:
patent: 6185143 (2001-02-01), Perner et al.
patent: 6804144 (2004-10-01), Iwata
patent: 2002/0047145 (2002-04-01), Nickel
patent: 2003/0161179 (2003-08-01), Bloomquist et al.
patent: 2003/0188240 (2003-10-01), Perner
patent: 2003/0206432 (2003-11-01), Munden et al.
U.S. Appl. No. 10/614,581, entitled “Memory Cell Strings in a Resistive Cross Point Memory Cell Array,” by Kenneth K. Smith et al., filed Jul. 7, 2003.

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