Storage device and semiconductor device

Details Storage device and semiconductor device Storage device and semiconductor device

2006-09-11

2008-12-30

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S055000, C365S066000, C365S189070, C365S100000, C365S158000

Reexamination Certificate

active

07471543

ABSTRACT:
A storage device includes a memory cell having a storage element having a characteristic of changing from a state of a high resistance value to a state of a low resistance value by being supplied with a voltage equal to or higher than a first threshold voltage, and changing from a state of a low resistance value to a state of a high resistance value by being supplied with a voltage equal to or higher than a second threshold voltage different in polarity from the first threshold voltage, and a circuit element connected in series with the storage element, wherein letting R be a resistance value of the storage element after writing, V be the second threshold voltage, and I be a current that can be passed through the storage element at a time of erasure, R≧V/I.

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