Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2008-09-09
2008-09-09
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S046000, C365S163000, C365S048000, C365S050000
Reexamination Certificate
active
11420290
ABSTRACT:
A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the lower state to the higher state when an electric signal of a second threshold level or higher whose polarity is different from the polarity of the electric signal of the first threshold level or higher is applied, and a circuit element connected in series with the storage element. In a state in which an erasing voltage is applied to at least one memory cell on which erasing is currently being performed, after the lapse of a predetermined time from the application, an erasing voltage is applied to at least one memory cell on which erasing is to be next performed.
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Hachino Hidenari
Mori Hironobu
Okazaki Nobumichi
Hoang Huan
Lappas Jason
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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