Storage device

Static information storage and retrieval – Systems using particular element – Magnetoresistive

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Details

365173, 365157, G11C 1115

Patent

active

055153143

ABSTRACT:
A storage device includes an MR element; write circuit responsive to input of binary storage data indicative of either a first state or a second state, and applying a write magnetic field in a first direction correspondingly to the first state, or applying the write magnetic field in a reverse second direction correspondingly to the second state; and read circuit for applying a bias magnetic field to the MR element and discriminating between the first and second states in accordance with the volume resistivity of the MR element.

REFERENCES:
patent: 4356523 (1982-10-01), Yeh
patent: 4829476 (1989-05-01), Dupuis et al.
patent: 4897288 (1199-01-01), Jenson
patent: 5012444 (1991-04-01), Hurst, Jr. et al.
patent: 5343422 (1994-08-01), Kung et al.

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