Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2008-01-29
2008-01-29
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S203000
Reexamination Certificate
active
07324372
ABSTRACT:
The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected word line conduct. To achieve the object, a source line parallel to a data line is provided, a precharge circuit for equipotentially driving both and a circuit for selectively driving the source line are arranged. Owing to this configuration, a current path is created in only a cell selected by a row decoder and a column decoder and a read-out signal can be generated. Therefore, a lower-power, lower-noise and more highly integrated nonvolatile memory such as a phase change memory can be realized, compared with a conventional type.
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Hanzawa Satoru
Itoh Kiyoo
Matsuoka Hideyuki
Sakata Takeshi
Terao Motoyasu
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Reed Smith LLP
Tran Michael T
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