Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2008-12-10
2010-11-16
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
C365S184000
Reexamination Certificate
active
07835195
ABSTRACT:
The memory comprises at least two data storage units using hot carrier stressing damage to store data. Each data storage unit comprises the first terminal, the second terminal and a third terminal. When the first cross voltage between the second and third terminals is higher than the first threshold voltage and the second cross voltage between the first and third terminals is higher than the second threshold voltage, the data storage unit is in the first writing operation.
REFERENCES:
patent: 4843442 (1989-06-01), Boudou et al.
patent: 6018475 (2000-01-01), Papadas et al.
patent: 6859390 (2005-02-01), Pashmakov
patent: 7764541 (2010-07-01), Kohler et al.
patent: 09223750 (1997-08-01), None
patent: 2005081258 (2005-09-01), None
Extended EP Search Report issued Feb. 10, 2009.
English Abstract of JP09223750.
Ayres John Richard
Edwards Martin John
Young Nigel David
Nguyen Tan T.
Thomas Kayden Horstemeyer & Risley
TPO Displays Corp.
LandOfFree
Storage data unit using hot carrier stressing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Storage data unit using hot carrier stressing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage data unit using hot carrier stressing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4164291