Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-18
2005-01-18
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000
Reexamination Certificate
active
06844581
ABSTRACT:
A storage capacitor, in particular a ferroelectric or paraelectric storage capacitor, and an associated contact-making structure are formed in such a way that the storage capacitor has a first electrode layer, a second electrode layer and a dielectric, ferroelectric or paraelectric capacitor intermediate layer. Proceeding from the plane of the surface of the insulation layer, the storage capacitor extends at least partly into the interior of the via contact and is electrically connected to the via contact.
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Dehm Christine
Mazure-Espejo Carlos
Sitaram Arkalgud
Greenberg Laurence A.
Infineon - Technologies AG
Mayback Gregory L.
Pham Hoai
Stemer Werner H.
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