Storage capacitor and associated contact-making structure...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S296000, C257S301000

Reexamination Certificate

active

06844581

ABSTRACT:
A storage capacitor, in particular a ferroelectric or paraelectric storage capacitor, and an associated contact-making structure are formed in such a way that the storage capacitor has a first electrode layer, a second electrode layer and a dielectric, ferroelectric or paraelectric capacitor intermediate layer. Proceeding from the plane of the surface of the insulation layer, the storage capacitor extends at least partly into the interior of the via contact and is electrically connected to the via contact.

REFERENCES:
patent: 5760474 (1998-06-01), Schuele
patent: 5828092 (1998-10-01), Tempel
patent: 6083765 (2000-07-01), Tempel
patent: 6344965 (2002-02-01), Roh
patent: 6462931 (2002-10-01), Tang et al.
patent: 196 40 448 C 1 (1998-02-01), None
patent: 0 991 117 (2000-04-01), None
patent: 1 022 783 (2000-07-01), None
patent: 0014796 (2000-03-01), None
Shaohong Kuah et al.: “Interaction Of Ir And IrO2Thin Films With Polysilicon, W And WSIx”,Integrated Ferroelectrics, 1997, vol. 17, pp. 479-488.
Seon Yong Cha et al.: “Deoxidization of Iridium Oxide Thin Film”,Jpn. J. Appl. Phys., vol. 38, 1999, pp. L1128-L1130.
Wolfgang Hönlein: “Neue Dielektrika für Gbit-Speicherchips” (New Dielectric for Gbit Memory Chips), Phys. Bl. 55, No. 2, 1999, published by Wiley-VCH Verlag GmbH, pp. 51-53.
D. Widmann et al.: ,, Technologie hochintegrierter Schaltungen (Technology of High Integrated Circuits), Edition 2, Springer-Publishing-House, Chapter 8.4.2 ,,Aufbau von dynamischen Speicherzellen (Structure of Dynamic Memory Cells).

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