Storage apparatus including non-volatile SRAM

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S156000, C365S158000

Reexamination Certificate

active

07903451

ABSTRACT:
According to one embodiment, a storage apparatus includes: a first inverter; a second inverter; a first storage element having a first state and a second state; and a second storage element having a third state and a fourth state, wherein the first storage element is brought into the first state when a current flows from the first storage element to the first storage element and is brought into the second state when the current flows from the first storage element to the first storage element, wherein the second storage element is brought into the fourth state when a current flows from the second storage element to the second storage element and is brought into the third state when the current flows from the second storage element to the second storage element.

REFERENCES:
patent: 6944050 (2005-09-01), Kang et al.
patent: 7206217 (2007-04-01), Ohtsuka et al.
patent: 7733145 (2010-06-01), Abe et al.
patent: 2008/0080231 (2008-04-01), Abe et al.
patent: 2008/0298117 (2008-12-01), Hamada et al.
patent: 2009/0109734 (2009-04-01), Hanafi
patent: 2010/0080054 (2010-04-01), Abe
patent: 2008-085770 (2008-04-01), None
Sunami, “Low-Volume Manufacturing on Developing Memory,” Semiconductor Memory, Ch. 4, 2008.

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